The Patent Trial and Appeal Board said that some challenged claims of Yangtze Memory Technologies Ltd.'s patent that relates to a channel hole plug structure of three-dimensional memory devices are unpatentable as obvious over prior art, in an inter partes review by Micron Technology Inc. The board determined that some challenged claims are obvious over prior art that relates to three-dimensional NAND memory devices and describes four exemplary structures and modifications thereo, relates to bonded semiconductor chip assemblies for three-dimensional NAND flash memory that have through-substrate via structures, and that discloses a three-dimensional array device having a metal containing barrier ...
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