The Patent Trial and Appeal Board said that challenged claims of Yangtze Memory Technologies Company Ltd.'s patent that relates to a non-volatile memory device and control method capable of applying word line pre-pulse signals with different voltage levels are unpatentable as obvious over prior art, in an inter partes review by Micron Technology Inc. The board determined that the challenged claims are obvious over prior art that relates to a semiconductor memory device in which pre-bias voltages are applied to a plurality of word lines to precharge channel regions of the memory cells, and titled “Non-Volatile Memory with Countermeasure for ...
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