The Patent Trial and Appeal Board said that challenged claims of Yangtze Memory Technologies Company Ltd.'s patent that relates to apparatuses and methods for verifying/reading memory cells of a 3D-NAND memory device aren’t unpatentable as obvious over and anticipated by prior art, in an inter partes review by Micron Technology Inc. The board found that the challenged claims aren’t obvious over and anticipated by various combinations of prior art, including prior art that relates to a reading method of 3D NAND flash memory, describes a method of programming in a nonvolatile memory device capable of reducing disturbance on unselected memory ...
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